Semiconductor device package

ABSTRACT

A semiconductor device package includes a first substrate, a second substrate, a first electronic component, a second electronic component and a shielding layer. The second substrate is disposed over the first substrate. The first electronic component is disposed between the first substrate and the second substrate. The second electronic component is disposed between the first substrate and the second substrate and adjacent to the second substrate than the first electronic component. The shielding element electrically connects the second electronic component to the second substrate. The second electronic component and the shielding element define a space accommodating the first electronic component.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a semiconductor device package havingan interposer, and a method of manufacturing the same.

2. Description of Related Art

As the requirement of the performance and the functionality of asemiconductor device package increases, more electronic components areintegrated within a single semiconductor device package. In order toincrease package density and to reduce the area of the semiconductordevice package, a dual-side assembly may be employed. That is, theelectronic components may be mounted on both surfaces of a substrate ora carrier. As the number of the electronic components increases, it isdesirable to further reduce the size of the semiconductor devicepackage.

SUMMARY

According to some embodiments of the present disclosure, a semiconductordevice package includes a first substrate, a second substrate, a firstelectronic component, a second electronic component and a shieldinglayer. The second substrate is disposed over the first substrate. Thefirst electronic component is disposed between the first substrate andthe second substrate. The second electronic component is disposedbetween the first substrate and the second substrate and adjacent to thesecond substrate than the first electronic component. The shieldingelement electrically connects the second electronic component to thesecond substrate. The second electronic component and the shieldingelement define a space accommodating the first electronic component.

According to some embodiments of the present disclosure, a semiconductordevice package includes a first substrate, and a second substrate and athird substrate. The second substrate is disposed over the firstsubstrate. The third substrate is disposed over the first substrate andside by side with the second substrate. The first substrate and thesecond substrate define a first bonding region. The first substrate andthe third substrate define a second bonding region. A height of thefirst bonding region is different from a height of the second bondingregion.

According to some embodiments of the present disclosure, a semiconductordevice package includes a first substrate, a first electronic component,an optical device, a compartment shield and a first encapsulant. Thefirst substrate has a first surface and a second surface opposite to thefirst surface. The first electronic component is disposed on the firstsurface of the first substrate. The optical device is disposed on thefirst surface of the first substrate. The optical device includes areceiving region adjacent to the first electronic component. Thecompartment shield is disposed between the first electronic componentand the receiving region. The first encapsulant encapsulates the firstelectronic component and between the first electronic component and thereceiving region.

In order to further understanding of the present disclosure, thefollowing embodiments are provided along with illustrations tofacilitate appreciation of the present disclosure; however, the appendeddrawings are merely provided for reference and illustration, and do notlimit the scope of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 1B illustrates an enlarged view of a portion of the semiconductordevice package 1 as shown in FIG. 1A, in accordance with someembodiments of the present disclosure.

FIG. 1C illustrates an enlarged view of a portion of the semiconductordevice package 1 as shown in FIG. 1A, in accordance with someembodiments of the present disclosure.

FIG. 2 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 3 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 4 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 5 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 6 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 7 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 8 is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 9A is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 9B is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 9C is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 9D is a cross-sectional view of a semiconductor device package inaccordance with an embodiment of the present disclosure.

FIG. 10A, FIG. 10B, FIG. 10C, FIG. 10D, FIG. 10E, FIG. 10F, FIG. 10G,FIG. 10H, FIG. 10I, FIG. 10J, FIG. 10K, FIG. 10L, FIG. 10M and FIG. 10Nillustrate a semiconductor manufacturing method in accordance with someembodiments of the present disclosure.

DETAILED DESCRIPTION

The aforementioned illustrations and following detailed descriptions areexamples for the purpose of explaining the present disclosure.

FIG. 1A illustrates a cross-sectional view of a semiconductor devicepackage 1 in accordance with some embodiments of the present disclosure.The semiconductor device package 1 includes substrates 10, 11,electronic components 12 a, 12 b, 12 c, 12 d, 12 e, 12 f, 12 g, 12 h, 12i, 12 j, 12 k, a connector module 13, an interposer 14, package bodies15, 16 and a shielding layer 17.

The substrate 10 may be, for example, a printed circuit board, such as apaper-based copper foil laminate, a composite copper foil laminate, or apolymer-impregnated glass-fiber-based copper foil laminate. Thesubstrate 10 may include an interconnection structure, such as aredistribution layer (RDL) or a grounding element. In some embodiments,the substrate 10 may be a single-layer substrate or multi-layersubstrate which includes a core layer and a conductive material and/orstructure disposed on a surface 101 (also can be referred to as a topsurface or a first surface) and a surface 102 (also can be referred toas a bottom surface or a second surface) of the substrate 10. Theconductive material and/or structure may include a plurality of traces.The substrate 10 may include one or more conductive pads 10 p 1 inproximity to, adjacent to, or embedded in and exposed at the surface 101of the substrate 10. The substrate 10 may include one or more conductivepads 10 p 2 in proximity to, adjacent to, or embedded in and exposed atthe surface 102 of the substrate 10. The substrate 10 may include solderresists 10 s 1 and 10 s 2 (or solder mask) respectively on the surfaces101 and 102 of the substrate 10 to fully expose or to expose at least aportion of the conductive pads 10 p 1 and 10 p 2 for electricalconnections.

The substrate 11 is disposed over the surface 101 of the substrate 10.In some embodiments, the substrate 11 and the substrate 10 may includethe same material. Alternatively, the substrate 11 and the substrate 10may include different materials. The substrate 11 may include one ormore conductive pads 11 p 1 in proximity to, adjacent to, or embedded inand exposed at a surface 111 of the substrate 11. The substrate 11 mayinclude one or more conductive pads 11 p 2 in proximity to, adjacent to,or embedded in and exposed at a surface 112 of the substrate 11. Thesubstrate 11 may include solder resists 11 s 1 and 11 s 2 (or soldermask) respectively on the surfaces 111 and 112 of the substrate 11 tofully expose or to expose at least a portion of the conductive pads 11 p1 and 11 p 2 for electrical connections.

The interposer 14 is disposed between the substrates 10 and 11, andelectrically connected to the substrates 10 and 11. The interposer 14may include a dielectric layer 14 d and at least one via 14 vpenetrating the dielectric layer 14 d for electrical connection. Theexposed portions of the via 14 v may be electrically connected to thesubstrate 10 (e.g., to the conductive pad 10 p 1) and the substrate 11(e.g., to the conductive pad 11 p 2) through solder balls 14 s. In someembodiments, there may be any number of the interposers 14 depending ondifferent design specifications. The interposers 14 may be disposed inor near the periphery or any other locations of the substrate 10 or 11.

The electronic components 12 a, 12 b, 12 c and 12 k are disposed on thesurface 101 of the substrate 10 and electrically connected to thesubstrate 10 (e.g., to the conductive pads 10 p 1). The electroniccomponents 12 a, 12 b, 12 c and 12 k may include active electricalcomponents and/or passive electrical components. For example, theelectronic components 12 a, 12 k may be chips or dice including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. For example, theelectronic components 12 b, 12 c may be passive electrical components,such as capacitors, resistors or inductors. Each electronic components12 a, 12 b, 12 c and 12 k may be electrically connected to one or moreof another electronic components 12 a, 12 b, 12 c and 12 k and to thesubstrate 10 (e.g., to the RDL), and electrical connection may beattained by way of flip-chip or wire-bond techniques.

In some embodiments, a compartment shield 18 a is disposed between thesubstrates 10 and 11, and electrically connected to the substrates 10and 11. The compartment shield may be disposed between two electroniccomponents (e.g., the electronic components 12 b and 12 k) to preventinterference (e.g., cross-talk issue, electromagnetic interference issueor the like) therebetween. In some embodiments, the compartment shield18 may include, for example, aluminum (Al), copper (Cu), chromium (Cr),tin (Sn), gold (Au), silver (Ag), nickel (Ni) or stainless steel, or amixture, an alloy, or other combination thereof.

The electronic components 12 f and the connector module 13 are disposedon the surface 102 of the substrate 10 and electrically connected to thesubstrate 10 (e.g., to the conductive pads 10 p 2). The electroniccomponent 12 f may include an active electrical component or a passiveelectrical component. For example, the electronic component 12 f may bea chip or a die including a semiconductor substrate, one or moreintegrated circuit devices and one or more overlying interconnectionstructures therein. The electronic component 12 f may be electricallyconnected to the substrate 10 (e.g., to the RDL), and electricalconnection may be attained by way of flip-chip or wire-bond techniques.In some embodiments, the connector module 13 may provide electricalconnections between the semiconductor device package 1 and externaldevices or a circuit board. For example, the electrical connections maybe achieved by a Bus, a Universal Serial Bus (USB) (e.g., Type-A, Type-Bor Type-C), a high definition multimedia interface (HDMI) or any otherdata transmission mechanisms.

The electronic components 12 d and 12 e are disposed on the surface 112of the substrate 11 and electrically connected to the substrate 11(e.g., to the conductive pads 11 p 2). The electronic components 12 dand 12 e may include active electrical components and/or passiveelectrical components. For example, the electronic component 12 d may bea chip or a die including a semiconductor substrate, one or moreintegrated circuit devices and one or more overlying interconnectionstructures therein. For example, the electronic component 12 e may be apassive electrical component, such as a capacitor, a resistor or aninductor. Each electronic components 12 d and 12 e may be electricallyconnected to one or more of another electronic components 12 d and 12 eand to the substrate 11 (e.g., to the RDL), and electrical connectionmay be attained by way of flip-chip or wire-bond techniques.

In some embodiments, a shielding layer 12 d 1 (or a shielding element)is disposed on a backside surface of the electronic component 12 d toprovide an electromagnetic interference (EMI) shielding for theelectronic component 12 d. The shielding layer 12 d 1 is electrically tothe substrate 11 (e.g., to the ground) through a bonding wire 12 d 2and/or a conductive adhesive 12 d 3. The electronic component 12 d andthe electronic component 12 c are at least partially overlapping in adirection perpendicular to the surface 101 of the substrate 10. Forexample, a projection of the electronic component 12 d on the surface101 of the substrate 10 and a projection of the electronic component 12c on the surface 101 of the substrate 10 are at least partiallyoverlapping. In some embodiments, the electronic component 12 c mayextend within a space defined by the shielding layer 12 d 1, the bondingwire 12 d 2 and the conductive adhesive 12 d 3. For example, a portionof the electronic component 12 c and a portion of the bonding wire 12 d2 are overlapping in a direction parallel to the surface 101 of thesubstrate 10. By using the space defined by the shielding layer 12 d 1,the bonding wire 12 d 2 and the conductive adhesive 12 d 3 toaccommodate a portion of the electronic component 12 c, the area of thesemiconductor device package 1 can be reduced.

The package body 15 is disposed between the substrates 10 and 11 tocover or encapsulate the interposer 14, the compartment shield 18 a andthe electronic components 12 a, 12 b, 12 c, 12 d, 12 e and 12 k. In someembodiments, the package body 15 includes an epoxy resin having fillers,a molding compound (e.g., an epoxy molding compound or other moldingcompound), a polyimide, a phenolic compound or material, a material witha silicone dispersed therein, or a combination thereof.

The electronic components 12 g, 12 h, 12 i and 12 j are disposed on thesurface 111 of the substrate 11 and electrically connected to thesubstrate 11 (e.g., to the conductive pads 11 p 1). The electroniccomponents 12 g, 12 h, 12 i and 12 j may include active electricalcomponents and/or passive electrical components. For example, theelectronic components 12 g and 12 h may be chips or dice including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. In someembodiments, the electronic component 12 g is similar to the electroniccomponent 12 d. For example, the electronic component 12 g also includesa shielding layer connected to ground of the substrate 11. Theelectronic component 12 h may be a passive electrical component, such asa capacitor, a resistor or an inductor. In some embodiments, theelectronic components 12 h and 12 i are electronic components thatrequire the shielding capability. For example, the electronic component12 h may be a radio frequency (RF) device. For example, the electroniccomponent 12 i may be an optical device.

As shown in FIG. 1B, which illustrates an enlarged view of a portion ofthe semiconductor device package 1 encircled by a dotted-line rectangle1A as shown in FIG. 1A, in accordance with some embodiments of thepresent disclosure, the electronic components 12 i and 12 j are disposedon a surface 12 s 1 of a substrate 12 s, and the substrate 12 s isdisposed on the surface 111 of the substrate 11. In some embodiments,the substrate 12 s may be omitted, and the electronic components 12 iand 12 j are directly disposed on the surface 111 of the substrate 11 asshown in FIG. 1C. The electronic components 12 i and 12 j are spacedapart or separated by the package body 16.

In some embodiments, the electronic component 12 i may include a lightdetector which is, for example, a PIN diode (a diode including a p-typesemiconductor region, an intrinsic semiconductor region, and an n-typesemiconductor region) or a photo-diode or a photo-transistor. Theelectronic component 12 i can be connected to the substrate 12 s, forexample, by way of flip-chip or wire-bond techniques. The electroniccomponent 12 i has an active surface (or light detecting surface) facingaway from the substrate 12 s. The electronic component 12 j may includean emitting die or other optical die. For example, the electroniccomponent 12 j may include a light-emitting diode (LED), a laser diode,or another device that may include one or more semiconductor layers. Thesemiconductor layers may include silicon, silicon carbide, galliumnitride, or any other semiconductor materials. The electronic component12 j can be connected to the substrate 12 s, for example, by way offlip-chip or wire-bond techniques. The electronic component 12 j has anactive surface (or light emitting surface) facing away from thesubstrate 12 s. The package body 17 defines cavities 12 c 1 and 12 c 2to respectively accommodate the electronic components 12 i and 12 j. Forexample, the electronic components 12 i and 12 j are exposed from thepackage body 17.

A compartment shield 18 b is disposed between the electronic component12 h and the electronic component 12 i. In some embodiments, thecompartment shield 18 b may be electrically connected to ground of thesubstrate 11. In some embodiments, the compartment shield 18 b may beelectrically connected to the shielding layer 17. Hence, the compartmentshield 18 b can be grounded through the substrate 11 and/or through theshielding layer 17. The compartment shield 18 can provide interference(e.g., cross-talk issue, electromagnetic interference issue or the like)shielding for the electronic component 12 h. For example, thecompartment shield can prevent interference between the electroniccomponent 12 h and other electronic components. In addition, thecompartment shield 18 b and the shielding layer 17 may prevent undesiredlight from entering the light detecting surface of the electroniccomponent 12 i (e.g., through the path L11 as shown in FIG. 1B). Byusing a single compartment shield 18 b to provide shielding capabilityfor both electronic components 12 h and 12 i, the area and the cost formanufacturing the semiconductor device package 1 can be reduced. In someembodiments, the compartment shield 18 b and the compartment shield 18 amay include the same material. Alternatively, the compartment shield 18b and the compartment shield 18 a are formed of different materials.

Referring to FIG. 1A, the package body 16 is disposed on the surface 111of the substrate 11 and covers the electronic components 12 g, 12 h, 12i, 12 j and the compartment shield 18 b. In some embodiments, theelectronic components 12 i, 12 j and a portion (e.g., a top surface) ofthe compartment shield 18 b are exposed from the package body 16. Insome embodiments, the package body 16 includes an epoxy resin havingfillers, a molding compound (e.g., an epoxy molding compound or othermolding compound), a polyimide, a phenolic compound or material, amaterial with a silicone dispersed therein, or a combination thereof.

The shielding layer 17 is disposed on an external surface of the packagebodies 15, 16 and covers the package bodies 15, 16 and the substrates10, 11. The shielding layer 17 is electrically connected to thegrounding element of the substrate 10 and/or 11. The shielding layer 17is electrically connected to the compartment shield 18 b. In someembodiments, the shielding layer 17 is a conformal shield. The shieldinglayer 17 is substantially aligned with the surface 102 of the substrate10. In some embodiments, the shielding layer 17 is a conductive thinfilm, and may include, for example, Al, Cu, Cr, Sn, Au, Ag, Ni orstainless steel, or a mixture, an alloy, or other combination thereof.The shielding layer 17 may include a single conductive layer or multipleconductive layers.

FIG. 2 illustrates a cross-sectional view of a semiconductor devicepackage 2 in accordance with some embodiments of the present disclosure.The semiconductor device package 2 is similar to the semiconductordevice package 1 as shown in FIG. 1A, and the differences therebetweenare described below.

A lateral surface 113 of the substrate 11 is recessed from a lateralsurface 163 of the package body 16. For example, the lateral surface 113of the substrate 11 and the lateral surface 163 of the package body 16are non-coplanar. For example, there is a gap between the lateralsurface 113 of the substrate 11 and the lateral surface 163 of thepackage body 16. For example, the lateral surface 113 of the substrate11 is covered by the package body 16. For example, a width of thesubstrate 11 is less than is width of the substrate 10.

FIG. 3 illustrates a cross-sectional view of a semiconductor devicepackage 3 in accordance with some embodiments of the present disclosure.The semiconductor device package 3 is similar to the semiconductordevice package 1 as shown in FIG. 1A, and the differences therebetweenare described below.

As shown in FIG. 3, the semiconductor device package 3 includes arelatively thicker (or taller) electronic component 32 a. In someembodiments, a thickness the electronic component 32 a is greater than athickness of other electronic components disposed between the substrates10 and 11 or a sum of the thicknesses of two electronic components(e.g., the electronic components 12 c and 12 d) disposed in a stackedarrangement between the substrates 10 and 11. To reduce the thickness ofthe semiconductor device package 3, the substrate 11 may include ordefine an opening 11 h (or a hole) penetrating the substrate 11 toaccommodate a portion of the electronic component 32 a. For example, theelectronic component 32 a may extend within the opening 11 h of thesubstrate 11.

FIG. 4 illustrates a cross-sectional view of a semiconductor devicepackage 4 in accordance with some embodiments of the present disclosure.The semiconductor device package 4 is similar to the semiconductordevice package 2 as shown in FIG. 2, and some of the differencestherebetween are described below.

The semiconductor device package 4 further includes a substrate 40disposed over the surface 102 of the substrate 10. In some embodiments,the substrate 40 and the substrate 10 may include the same material.Alternatively, the substrate 40 and the substrate 10 may includedifferent materials. The interposer 44 is disposed between thesubstrates 10 and 40, and electrically connected to the substrates 10and 40. The interposer 44 may include a dielectric layer 44 d and atleast one via 44 v penetrating the dielectric layer 44 d for electricalconnection. The exposed portions of the via 44 v may be electricallyconnected to the substrate 10 and the substrate 40 through solder balls44 s. In some embodiments, there may be any number of the interposers 44depending on different design specifications. The interposers 44 may bedisposed in or near the periphery or any other locations of thesubstrate 10 or 40. By providing the substrate 40, the area of thesemiconductor device package 4 can be further reduced.

The electronic components 42 a, 42 b are disposed on the surface 102 ofthe substrate 10 and electrically connected to the substrate 10. Theelectronic components 42 c, 42 d are disposed on the surface 401 of thesubstrate 40 and electrically connected to the substrate 40. Theelectronic components 42 a, 42 b, 42 c, 42 d may include activeelectrical components and/or passive electrical components. For example,the electronic components 42 a, 42 c may be chips or dice including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. For example, theelectronic components 42 b, 42 d may be passive electrical components,such as capacitors, resistors or inductors. The connector module 13 isdisposed on the surface 402 of the substrate 40 and electricallyconnected to the substrate 40.

The package body 45 is disposed between the substrates 10 and 40 tocover or encapsulate the interposer 44 and the electronic components 42a, 42 b, 42 c, 42 d. In some embodiments, the package body 45 includesan epoxy resin having fillers, a molding compound (e.g., an epoxymolding compound or other molding compound), a polyimide, a phenoliccompound or material, a material with a silicone dispersed therein, or acombination thereof. Similar to the substrate 11, a lateral surface 403of the substrate 40 may be recessed from a lateral surface of thepackage body 45. In other embodiments, the lateral surface 403 of thesubstrate 40 may be coplanar with the lateral surface of the packagebody 45.

FIG. 5 illustrates a cross-sectional view of a semiconductor devicepackage 5 in accordance with some embodiments of the present disclosure.The semiconductor device package 5 is similar to the semiconductordevice package 2 as shown in FIG. 2, and the some of the differencestherebetween are described below.

The surface 101 of the substrate 10 may include a first portion coveredby a package body 55 and a second portion exposed from the package body55. As shown in FIG. 6, the substrate 11, the electronic components 12a, 12 b, 12 c, 12 d, 12 e, 12 g, 12 h, 12 i, 12 j, 12 k, the interposer14, package body 55 and the shielding layer 17 are disposed over thefirst portion of the surface 101 of the substrate 10. Electroniccomponents 52 a, 52 b are disposed on the second portion of the surface101 of the substrate 10. For example, the electronic components 52 a and52 b are not covered by the package body 55. In some embodiments, theelectronic components 52 a and 52 b may be electrical devices requiredto be exposed to the outside of the semiconductor device package 5. Forexample, the electronic components 52 a and 52 b may be optical devices(e.g., light emitting devices or light detecting devices), sensors,MEMS, connector modules or other devices.

In some embodiments, the package body 55 includes an inclined or tiltedlateral surface 553. For example, the lateral surface 553 of the packagebody 55 is not perpendicular to the surface 101 of the substrate 10. Forexample, the lateral surface 553 of the package body 55 and the surface101 of the substrate 10 define an angle less than 90 degrees.

FIG. 6 illustrates a cross-sectional view of a semiconductor devicepackage 6 in accordance with some embodiments of the present disclosure.The semiconductor device package 6 is similar to the semiconductordevice package 5 as shown in FIG. 5, and the some of the differencestherebetween are described below.

The semiconductor device package 6 further includes a package body 65disposed on a portion of the surface 102 of the substrate 10. Forexample, the surface 102 of the substrate 10 may include a first portioncovered by the package body 65 and a second portion exposed from thepackage body 65. The electronic component 12 f may be disposed on thefirst portion of the surface 102 of the substrate 10 and covered by thepackage body 65. An electronic component 61 a and the connector module13 are disposed on the second portion of the surface 102 of thesubstrate 10. In some embodiments, the electronic component 62 a may bean electrical device required to be exposed to the outside of thesemiconductor device package 6. For example, the electronic components62 a may be an optical device (e.g., a light emitting device or a lightdetecting device), a sensor, MEMS, a connector module or other devices.In some embodiments, the package body 65 includes an epoxy resin havingfillers, a molding compound (e.g., an epoxy molding compound or othermolding compound), a polyimide, a phenolic compound or material, amaterial with a silicone dispersed therein, or a combination thereof.

FIG. 7 illustrates a cross-sectional view of a semiconductor devicepackage 7 in accordance with some embodiments of the present disclosure.The semiconductor device package 7 is similar to the semiconductordevice package 6 as shown in FIG. 6, and some of the differencestherebetween are described below.

The semiconductor device package 7 further includes a substrate 70disposed over the surface 102 of the substrate 10. In some embodiments,the substrate 70 and the substrate 10 may include the same material.Alternatively, the substrate 70 and the substrate 10 may includedifferent materials. The interposer 74 is disposed between thesubstrates 10 and 70, and electrically connected to the substrates 10and 70. The interposer 74 may include a dielectric layer 74 d and atleast one via 74 v penetrating the dielectric layer 74 d for electricalconnection. The exposed portions of the via 74 v may be electricallyconnected to the substrate 10 and the substrate 70 through solder balls74 s. In some embodiments, there may be any number of the interposers 74depending on different design specifications. The interposers 74 may bedisposed in or near the periphery or any other locations of thesubstrate 10 or 70. By providing the substrate 70, the area of thesemiconductor device package 7 can be further reduced.

The electronic components 72 a, 72 b are disposed on a surface 701 ofthe substrate 70 and electrically connected to the substrate 70. Theelectronic components 72 a, 72 b may include active electricalcomponents and/or passive electrical components. For example, theelectronic component 72 a may be a chip or a die including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. For example, theelectronic component 72 b may be a passive electrical component, such asa capacitor, a resistor or an inductor. A connector module 73 isdisposed on a surface 702 of the substrate 70 and electrically connectedto the substrate 70.

The package body 65 is disposed between the substrates 10 and 70 tocover or encapsulate the interposer 74 and the electronic components 12f, 72 a, 72 b. Similar to the substrate 11, a lateral surface 703 of thesubstrate 70 may be recessed from a lateral surface of the package body65. In other embodiments, the lateral surface 703 of the substrate 70may be coplanar with the lateral surface of the package body 65.

FIG. 8 illustrates a cross-sectional view of a semiconductor devicepackage 8 in accordance with some embodiments of the present disclosure.The semiconductor device package 8 is similar to the semiconductordevice package 7 as shown in FIG. 7, and one of the differencestherebetween is that in FIG. 8, the package body 65 fully covers orencapsulates the surface 102 of the substrate 10.

FIG. 9A illustrates a cross-sectional view of a semiconductor devicepackage 9A in accordance with some embodiments of the presentdisclosure. The semiconductor device package 9A includes substrates 10,91, 92, electronic components 92 a, 92 b, 92 c, 92 d, 92 e, 92 f, 92 g,92 h, 92 i a connector module 13, interposers 93, 94 and a package body95.

The substrate 90 is disposed over the surface 101 of the substrate 10.The substrate 90 is similar to the substrate 10, and thus thedescriptions or properties of the substrate 10 may be applicable to thesubstrate 90. In some embodiments, the substrate 90 and the substrate 10may include the same material. Alternatively, the substrate 90 and thesubstrate 10 may include different materials.

The interposer 94 is disposed between the substrates 10 and 90, andelectrically connected to the substrates 10 and 90. The interposer 94may include a dielectric layer 94 d and at least one via 94 vpenetrating the dielectric layer 94 d for electrical connection. Theexposed portions of the via 94 v may be electrically connected to thesubstrate 10 and the substrate 90 through solder balls. In someembodiments, there may be any number of the interposers 94 depending ondifferent design specifications. The interposers 94 may be disposed inor near the periphery or any other locations of the substrate 90.

The electronic component 92 a is disposed on the surface 101 of thesubstrate 10 and electrically connected to the substrate 10. Theelectronic component 92 b is disposed on the surface 902 of thesubstrate 90 and electrically connected to the substrate 90. Theelectronic components 92 a, 92 b may include active electricalcomponents and/or passive electrical components. For example, theelectronic components 92 a, 92 b may be chips or dice including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. In otherembodiments, the electronic components 92 a, 92 b may be passiveelectrical components, such as capacitors, resistors or inductors.

The electronic component 92 a and the electronic component 92 b are atleast partially overlapping in a direction perpendicular to the surface101 of the substrate 10. For example, a projection of the electroniccomponent 92 a on the surface 101 of the substrate 10 and a projectionof the electronic component 92 b on the surface 101 of the substrate 10are at least partially overlapping. In some embodiments, the electroniccomponent 92 a may be a relatively thicker electronic component, whilethe electronic component 92 b may be a relatively thinner electroniccomponent, and vice versa. By arranging one electronic component havinga relatively thinner thickness over another electronic component havinga relatively thicker thickness, the thickness of the semiconductordevice package 9A can be reduced.

The electronic component 92 c is disposed on the surface 901 of thesubstrate 90 and electrically connected to the substrate 90. Theelectronic component 92 c may include an active electrical componentand/or a passive electrical component. For example, the electroniccomponent 92 c may be a passive electrical component, such as acapacitor, a resistor or an inductor. In other embodiments, theelectronic component 92 c may be a chip or a die including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein.

The substrate 91 is disposed over the surface 101 of the substrate 10and spaced apart from the substrate 90. For example, there is a distancebetween the substrate 90 and the substrate 91. For example, thesubstrate 90 and the substrate 91 may define a recess 90 h. In someembodiments, the substrate 90 and the substrate 91 are separate (orindividual) substrates. The substrate 91 is similar to the substrate 10,and thus the descriptions or properties of the substrate 10 may beapplicable to the substrate 91. In some embodiments, the substrate 91and the substrate 10 may include the same material. Alternatively, thesubstrate 91 and the substrate 10 may include different materials.

The interposer 93 is disposed between the substrates 10 and 91, andelectrically connected to the substrates 10 and 91. The interposer 93may include a dielectric layer 93 d and at least one via 93 vpenetrating the dielectric layer 93 d for electrical connection. Theexposed portions of the via 93 v may be electrically connected to thesubstrate 10 and the substrate 91 through solder balls. In someembodiments, there may be any number of the interposers 93 depending ondifferent design specifications. The interposers 93 may be disposed inor near the periphery or any other locations of the substrate 91.

The electronic component 92 d is disposed on the surface 101 of thesubstrate 10 and electrically connected to the substrate 10. Theelectronic component 92 e is disposed on the surface 912 of thesubstrate 91 and electrically connected to the substrate 91. Theelectronic components 92 d, 92 e may include active electricalcomponents and/or passive electrical components. For example, theelectronic components 92 d, 92 e may be chips or dice including asemiconductor substrate, one or more integrated circuit devices and oneor more overlying interconnection structures therein. In otherembodiments, the electronic components 92 d, 92 e may be passiveelectrical components, such as capacitors, resistors or inductors.

The electronic component 92 d and the electronic component 92 e are atleast partially overlapping in a direction perpendicular to the surface101 of the substrate 10. For example, a projection of the electroniccomponent 92 d on the surface 101 of the substrate 10 and a projectionof the electronic component 92 e on the surface 101 of the substrate 10are at least partially overlapping. In some embodiments, the electroniccomponent 92 e may be a relatively thinner electronic component, whilethe electronic component 92 d may be a relatively thicker electroniccomponent, and vice versa. By arranging one electronic component havinga relatively thinner thickness over another electronic component havinga relatively thicker thickness, the thickness of the semiconductordevice package 9A can be reduced.

The electronic components 92 f and 92 g are disposed on the surface 101of the substrate 10 and electrically connected to the substrate 10. Insome embodiments, the electronic components 92 f and 92 g are disposedunder the recess 90 h defined by the substrates 10 and 11. For example,a projection of the electronic components 92 f and 92 g on the surface101 of the substrate and a projection of the substrate 90 or thesubstrate 91 are not overlapping. For example, the electronic components92 f and 92 g and the substrate 90 or the substrate 91 are notoverlapping in a direction perpendicular to the surface 101 of thesubstrate 10. In other embodiments, the substrate 90 or the substrate 91may extend over a portion of the electronic components 92 f and 92 g. Byarranging electronic components (e.g., the electronic components 92 fand 92 g) having a relatively thicker thickness under the recess 90 hdefined by two separate substrates (e.g., the substrates 90 and 91), thethickness of the semiconductor device package 9A can be further reduced.

In some embodiments, the electronic components 92 f and 92 g may includeactive electrical components and/or passive electrical components. Forexample, the electronic component 92 f may be a chip or a die includinga semiconductor substrate, one or more integrated circuit devices andone or more overlying interconnection structures therein. The electroniccomponent 92 g may be a passive electrical component, such as acapacitor, a resistor or an inductor.

In some embodiments, the substrate 90 and the substrate 91 may bearranged at different altitudes with respect to the substrate 10 (e.g.,a distance between the surface 912 of the substrate 91 and the surface101 of the substrate 10 is different from a distance between the surface902 of the substrate 90 and the surface 101 of the substrate 10)depending on the total thickness of the electronic componentsaccommodate under the substrate 90 and the substrate 91. For example, ifthe total thickness of the electronic components 92 d and 92 e isgreater than the total thickness of the electronic components 92 a and92 b, the distance between the surface 912 of the substrate 91 and thesurface 101 of the substrate 10 would be greater than the distancebetween the surface 902 of the substrate 90 and the surface 101 of thesubstrate 10. This would increase the flexibility for designing thearrangement of the electronic components of the semiconductor devicepackage 9A to save the area and the thickness of the semiconductordevice package 9A. In addition, by disposing the electronic components92 c on the substrate 90, which has a relatively lower altitude, thearea and the thickness of the semiconductor device package 9A can befurther reduced.

In some embodiments, the semiconductor device package 9A may includeseveral electronic components having a relatively thickness (e.g., theelectronic components 92 a and 92 d). The electronic components having arelatively thickness can be disposed at different regions. For example,the electronic component 92 a is disposed at the region between thesubstrate 10 and the substrate 90, and the electronic component 92 d isdisposed at another region between the substrate 10 and the substrate91. This can further reduce the thickness of the semiconductor devicepackage 9A.

In some embodiments, the electronic components can be arranged based ontheir widths (or areas) to further reduce the area of the semiconductordevice package. For example, as shown in FIG. 9B, the electroniccomponents 92 d and 92 e, which have a relatively larger width (or area)compared with the electronic components 92 a and 92 b can be arranged atthe same space or region (e.g., the space defined by the substrate 10and the substrate 91). Hence, the area of the semiconductor devicepackage 9B can be reduced.

In some embodiments, the electronic components can be arranged based ontheir thicknesses to further reduce the thickness of the semiconductordevice package. For example, as shown in FIG. 9C, the semiconductordevice package 9C includes a plurality of electronic components 92 d, 92e, 92 j and 92 k disposed at the space or region defined by thesubstrate 10 and the substrate 91. To efficiently utilize the heightdefined by the substrate 10 and the substrate 91, one electroniccomponent having a relatively thicker thickness and another electroniccomponent having a relatively thinner thickness are disposedoverlappingly in a direction perpendicular to the surface 101 of thesubstrate 10. For example, the electronic component 92 e having arelatively thinner thickness and the electronic component 92 d having arelatively thicker thickness are overlapping in the directionperpendicular to the surface 101 of the substrate 10. For example, theelectronic component 92 k having a relatively thinner thickness and theelectronic component 92 j having a relatively thicker thickness areoverlapping in the direction perpendicular to the surface 101 of thesubstrate 10. Hence, the thickness of the semiconductor device package9C can be reduced.

FIG. 9D illustrates a cross-sectional view of a semiconductor devicepackage 9D in accordance with some embodiments of the presentdisclosure. The semiconductor device package 9D is similar to thesemiconductor device package 9A as shown in FIG. 9A, and the differencestherebetween are described below.

A top surface of the package body 95 may include a recess or a stepstructure. For example, the package body 95 may include a top surface951 and a top surface 952, and the top surface 951 and the top surface952 are discontinuous or non-coplanar. For example, the top surface 952is recessed from the top surface 951. In the case that the electroniccomponent 92 c is not required, the thickness of the package body 95over the substrate 90 can be reduced to accommodate other externalelements or device to further reduce the area or thickness of anelectrical device including the semiconductor device package 9D.

FIG. 10A, FIG. 10B, FIG. 10C, FIG. 10D, FIG. 10E, FIG. 10F, FIG. 10G,FIG. 10H, FIG. 10I, FIG. 10J, FIG. 10K, FIG. 10L, FIG. 10M and FIG. 10Nillustrate a semiconductor manufacturing method in accordance with someembodiments of the present disclosure. In some embodiments, the methodin FIG. 10A, FIG. 10B, FIG. 10C, FIG. 10D, FIG. 10E, FIG. 10F, FIG. 10G,FIG. 10H, FIG. 10I, FIG. 10J, FIG. 10K, FIG. 10L, FIG. 10M and FIG. 10Ncan be used to manufacture the semiconductor device package 8 in FIG. 8.Alternatively, the method in FIG. 10A, FIG. 10B, FIG. 10C, FIG. 10D,FIG. 10E, FIG. 10F, FIG. 10G, FIG. 10H, FIG. 10I, FIG. 10J, FIG. 10K,FIG. 10L, FIG. 10M and FIG. 10N can be used to manufacture thesemiconductor device package in FIG. 1A, 2, 3, 4, 5, 6, 7, 9A, 9B, 9C or9D or other semiconductor device packages.

Referring to FIG. 10A, the substrate 11 is provided. Electroniccomponents 12 e and 12 d are disposed on the surface 112 of thesubstrate 11 by, for example, surface mount technique (SMT) or any othersuitable techniques. The electronic components 12 e and 12 d areelectrically connected to the substrate 11 through, for example,flip-chip, wire bonding or any other suitable techniques. One or moreelectrical contacts (e.g., solder balls 14 s) are then disposed on thesurface 112 of the substrate 11 and electrically connected to theconductive pads of the substrate 11.

In some embodiments, the electronic component 12 d may include ashielding layer disposed on the backside surface of the electroniccomponent 12 d and connected to ground of the substrate 11 through abonding wire 12 d 2 as shown in FIG. 10B. In other embodiments, theshielding layer may be connected to ground of the substrate through aconductive paste, a conductive glue or any other suitable materials.

Referring to FIG. 10C, electronic components 12 g, 12 h, 12 i and 12 jare disposed on the surface 111 of the substrate 11 by, for example, SMTor any other suitable processes. The electronic components 12 g, 12 h,12 i and 12 j are electrically connected to the substrate 11 through,for example, flip-chip, wire bonding or any other suitable techniques.In some embodiments, the electronic component 12 g may include ashielding layer disposed on the backside surface of the electroniccomponent 12 g and connected to ground of the substrate 11 through abonding wire 12 g 1 as shown in FIG. 10D.

Referring to FIG. 10E, the substrate 10 is provided. Electroniccomponents 12 a, 12 b and 12 c are disposed on the surface 101 of thesubstrate 10 and electrically connected to the substrate 10 through, forexample, flip-chip, wire bonding or any other suitable techniques. Theinterposer 14 is disposed on the surface 101 of the substrate 10 andelectrically connected to the substrate 10. In some embodiments, theoperations in FIG. 10E may be carried out prior to the operations inFIG. 10A.

Referring to FIG. 10F, the substrate 10 is connected to the substrate11. For example, the interposer 14 disposed on the surface 101 of thesubstrate 10 is connected to the solder balls 14 s. In some embodiments,a width (or an area) of the substrate 10 is less than a width (or anarea) of the substrate 11. Alternatively, the width of the substrate 10is equal to or greater than the width of the substrate 11.

Referring to FIG. 10G, the package body 55 is formed to cover theelectronic components 12 a, 12 b, 12 c, 12 d, 12 e, 12 i, 12 j, 12 g, 12h, the substrate 10 (including the surfaces 101, 102 and a lateralsurface extending therebetween), the interposer 14 and a portion of thesubstrate 11. For example, the package body 55 covers a first portion ofthe surface 101 of the substrate 10 on which the substrate 11 isdisposed and exposes a second portion of the surface 102 of thesubstrate 10. In some embodiments, the package body 55 may be formed byselective molding technique or any other suitable techniques.

Referring to FIG. 10H, electronic components 12 f are disposed on thesurface 102 of the substrate 10 and electrically connected to thesubstrate 10 through, for example, flip-chip, wire bonding or any othersuitable techniques. The interposer 74 is disposed on the surface 102 ofthe substrate 10 and electrically connected to the substrate 10.

Still referring to FIG. 10H, the substrate 70 on which one or moreelectronic components and the solder balls are disposed is provided. Thesubstrate 70 is then connected to the substrate 10. For example, thesolder balls disposed on the surface 701 of the substrate 70 isconnected to the interposer 74 disposed on the surface 102 of thesubstrate 10.

Referring to FIG. 10I, the package body 65 is formed between thesubstrate 10 and the substrate 70 to cover the electronic components andthe interposer 74 disposed therebetween. In some embodiments, thepackage body 65 may be formed by, for example, molding or any othersuitable processes.

Referring to FIG. 10J, the connector module 73 is disposed on thesurface 702 of the substrate 70. In some embodiments, the connectormodule 73 may be disposed by, for example, SMT or any other suitabletechniques.

Referring to FIG. 10K, electronic components 52 a and 52 b are disposedon the second portion of the surface 101 of the substrate 10 that isexposed from the package body 55. In some embodiments, the electroniccomponents 52 a and 52 b may be disposed by, for example, SMT or anyother suitable techniques.

Referring to FIG. 10L, one or more openings 15 h 1, 15 h 2, 15 h 3 (ortrenches) are formed from a top surface of the package body 55 into thepackage body 55 to penetrate the package body 55 to expose one or moreconductive pads on the surface 111 of the substrate 11 and at leastportion of the electronic components 12 i, 12 j. In some embodiments,the openings 15 h 1, 15 h 2, 15 h 3 may be formed by, laser, etching orany other suitable operations.

Referring to FIG. 10M, a conductive material is filled within theopening 15 h 1 to form the compartment shield 18 b. In some embodiments,the conductive material may be formed by plating, coating or any othersuitable processes. Then a singulation operation may be carried out toseparate out individual semiconductor package devices.

Referring to FIG. 10N, the shielding layer 17 is formed on the externalsurfaces (e.g., a portion of the top surface and the lateral surfaces)of the package body 55 and a portion of the lateral surface of thepackage body 65. In some embodiments, the shielding layer 17 may beformed by plating, coating, sputtering or any other suitable processes.

Reference to the formation or positioning of a first feature over or ona second feature in the present disclosure may include embodiments inwhich the first and second features are formed or disposed in directcontact, and may also include embodiments in which additional featuresmay be formed or disposed between the first and second features, suchthat the first and second features may not be in direct contact.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation of lessthan or equal to ±10% of that numerical value, such as less than orequal to ±5%, less than or equal to ±4%, less than or equal to ±3%, lessthan or equal to ±2%, less than or equal to ±1%, less than or equal to±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%.

For example, substantially parallel can refer to a range of angularvariation relative to 0° of less than or equal to ±10°, such as lessthan or equal to ±5°, less than or equal to ±4°, less than or equal to±3°, less than or equal to ±2°, less than or equal to ±1°, less than orequal to ±0.5°, less than or equal to ±0.1°, or less than or equal to±0.05°. For example, substantially perpendicular can refer to a range ofangular variation relative to 90° of less than or equal to ±10°, such asless than or equal to ±5°, less than or equal to ±4°, less than or equalto ±3°, less than or equal to ±2°, less than or equal to ±1°, less thanor equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to±0.05°.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm. Asurface can be deemed to be substantially flat if a displacement betweena highest point and a lowest point of the surface is no greater than 5μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

What is claimed is:
 1. A semiconductor device package, comprising: afirst substrate; a second substrate disposed over the first substrate; afirst electronic component disposed between the first substrate and thesecond substrate; and a second electronic component disposed between thefirst substrate and the second substrate and adjacent to the secondsubstrate than the first electronic component, a shielding elementelectrically connect the second electronic component to the secondsubstrate, wherein the second electronic component and the shieldingelement define a space accommodating the first electronic component. 2.The semiconductor device package of claim 1, wherein the firstelectronic component and the second electronic component are at leastpartially overlapped in a direction substantially perpendicular to thefirst substrate or the second substrate.
 3. The semiconductor devicepackage of claim 1, further comprising a first interposer disposedbetween the first substrate and the second substrate.
 4. Thesemiconductor device package of claim 1, further comprising: a thirdelectronic component disposed between the first electronic component andthe third electronic component; and a first compartment shield disposedbetween the first electronic component and the third electroniccomponent.
 5. The semiconductor device package of claim 1, furthercomprising a first package body disposed between the first substrate andthe second substrate, the first package body covering the firstelectronic component and the second electronic component.
 6. Thesemiconductor device package of claim 1, further comprising: a fourthelectronic component disposed on the second substrate; an optical devicedisposed on the second substrate and side by side with the fourthelectronic component; and a second compartment shield disposed on thesecond substrate and between the fourth electronic component and theoptical device.
 7. The semiconductor device package of claim 6, furthercomprising a second package body disposed on the second substrate,wherein the second package body covers the fourth electronic component,the optical device and the second compartment shield and exposes a topsurface of the second compartment shield and an upper portion of theoptical device.
 8. The semiconductor device package of claim 1, furthercomprising a connecting module disposed on the first substrate.
 9. Thesemiconductor device package of claim 1, wherein a lateral surface ofthe second substrate is recessed from a lateral surface of the firstsubstrate in the direction substantially perpendicular to the firstsubstrate.
 10. The semiconductor device package of claim 1, furthercomprising a sixth electronic component disposed on the first substrate,wherein the second substrate has an opening and the sixth electroniccomponent extends within the opening.
 11. The semiconductor devicepackage of claim 1, further comprising: a third substrate disposed overa surface of the first substrate facing away from the second substrate;a seventh electronic component disposed on a surface of the thirdsubstrate facing the second surface of the first substrate; and a secondinterposer disposed between the first substrate and the third substrate,the second interposer having a dielectric layer and a through viapenetrating the dielectric layer and electrically connected to the firstsubstrate and the third substrate.
 12. The semiconductor device packageof claim 11, further comprising: a third package body disposed betweenthe first substrate and the third substrate and covering the seventhelectronic component; and a connector module disposed on the secondsurface of the third substrate.
 13. The semiconductor device package ofclaim 1, further comprising: a fourth package body covering the firstelectronic component, the second electronic component and a firstportion of a surface of the first substrate facing the second substrate,the third package body exposing a second portion of the surface of thefirst substrate facing the second substrate; and an eighth electroniccomponent disposed on the second portion of the first surface of thefirst substrate.
 14. A semiconductor device package, comprising: a firstsubstrate; a second substrate disposed over the first substrate; a thirdsubstrate disposed over the first substrate and side by side with thesecond substrate; wherein the first substrate and the second substratedefine a first bonding region, the first substrate and the thirdsubstrate define a second bonding region, a height of the first bondingregion is different from a height of the second bonding region.
 15. Thesemiconductor device package of claim 14, further comprising a firstelectronic component disposed in the first bonding region; and a secondelectronic component disposed in the second bonding region, wherein athickness of the first electronic component is greater than a thicknessof the second electronic component.
 16. The semiconductor device packageof claim 15, wherein the height of the first bonding region is greaterthan the height of the second bonding region.
 17. A semiconductor devicepackage, comprising: a first substrate having a first surface and asecond surface opposite to the first surface; a first electroniccomponent disposed on the first surface of the first substrate; anoptical device disposed on the first surface of the first substrate, theoptical device including a receiving region adjacent to the firstelectronic component; a compartment shield disposed between the firstelectronic component and the receiving region; and a first encapsulantencapsulating the first electronic component and between the firstelectronic component and the receiving region.
 18. The semiconductordevice package of claim 17, wherein the compartment shield is disposedthrough the first encapsulant.
 19. The semiconductor device package ofclaim 17, further comprising: a second substrate disposed on the secondsurface of the first substrate, the second substrate having a firstsurface and a second surface opposite to the first surface; a firstinterposer disposed between the first substrate and the secondsubstrate; a plurality of first electronic components disposed betweenthe first substrate and the second substrate; and a plurality of secondelectronic components disposed on the second surface of the secondsubstrate; wherein the first encapsulant further covers a portion of thefirst electronic components and exposes a portion of the secondsubstrate.
 20. The semiconductor device package of claim 19, furthercomprising: a third substrate disposed on the second surface of thesecond substrate, the third substrate having a first surface and asecond surface opposite to the first surface; a second interposerdisposed between the second substrate and the third substrate; aplurality of third electronic components disposed on the first surfaceof the third substrate and between the second substrate and the thirdsubstrate; a fourth electronic component disposed second surface of thethird substrate; and a second encapsulant encapsulating the thirdelectronic components.